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Ion beam cone
Product Name: Ion Beam Cone (High Precision for Semiconductor Applications)
Summary Overview
The ion beam cones are mainly made of advanced ceramic materials such as high-purity alumina and silicon nitride. They are manufactured through precise injection molding and high-temperature sintering processes. This material is renowned for its extremely high purity, excellent high-temperature resistance, and stable geometric accuracy. Utilizing modern precision processing technology, these cones can produce products with complex designs and extremely high dimensional accuracy, ensuring their outstanding performance in semiconductor ion beam injection processes. UET is a reliable manufacturer of semiconductor ion beam cones in China, dedicated to producing highly reliable and highly pure ion beam cones. Their products always maintain high quality, controllable costs, and can be customized according to different customer needs.
Product Details
Ion beam cones can be manufactured in various sizes and models, and can be adjusted according to different application scenarios and process requirements to meet various semiconductor manufacturing needs. It has extremely precise geometry and inner hole diameter accuracy, with a surface quality reaching mirror-like level, without any impurities, scratches or defects. The internal flow channel design of the cone has been optimized to ensure the uniformity and stability of ion beam transmission, thereby improving the injection accuracy of semiconductor devices. The product uses high-purity raw materials, with extremely low impurity content, effectively avoiding contamination of semiconductor wafers.
Product Parameters (Specifications)
Parameter Categories
Specific parameters
Explanation
Manufacturing process
Injection molding machine
High-precision injection molding equipment
Temperature controller
±0.1°C precision temperature control system
Demolding system
Automated demolding device
Dehumidifier
Precise humidity control equipment
Materials
Aluminum oxide (Al₂O₃)
Purity ≥ 99.9%
Silicon nitride (Si₃N₄)
Purity ≥ 99.5%
Zirconium oxide (ZrO₂)
Purity ≥ 99.8%
Surface treatment
Ordinary processing
Basic surface treatment
Ultraviolet curing coating
Improve surface smoothness
Anti-abrasion coating
Improve wear resistance
Industry Application
Semiconductor industry
The core components of the ion implantation equipment
Flat panel display
Ion beam processing equipment
Optical device
Ion Beam Deposition System
Product Features and Applications
With the rapid development of the semiconductor industry, the precision requirements for ion beam injection processes have been increasing, posing even more challenging demands on the performance of ion beam cones. This has led to more precise design and stricter material selection for ion beam cones. UET is a reputable Chinese manufacturer dedicated to producing high-purity, high-precision, and high-reliability ion beam cones. The company has a complete quality management system and employs the most advanced manufacturing technologies and testing equipment to ensure that every product meets the strict standards of the semiconductor industry.
Core advantages
The ultra-high purity materials have a purity level of over 99.9%, effectively preventing impurities from contaminating the semiconductor wafers and ensuring the stability of the electrical performance of the devices.
The outstanding geometric precision injection molding process ensures that the size and shape of each produced cone tube are completely consistent, with the taper error controlled within ±0.05mm, and the inner hole roundness error being ≤0.02mm.
Excellent surface quality is achieved with a surface roughness of less than Ra 0.4 μm. The mirror-level surface treatment ensures the stability of ion beam transmission and reduces beam scattering.
Outstanding high-temperature resistance enables stable operation within a temperature range of -196°C to +800°C. The material has an extremely low thermal expansion coefficient, ensuring dimensional stability during temperature changes.
Perfect insulation performance with a volume resistivity of ≥ 10¹⁴ Ω·cm and a surface resistivity of ≥ 10¹² Ω, effectively preventing the accumulation of charges during the ion beam transmission process.
Excellent corrosion resistance, resistant to strong acids, strong alkalis and various plasma corrosion, ensuring long-term stability in complex processing environments.
Technical capabilities details
Processing material capacity
Material category
Specific material type
Purity standard
Application Features
Alumina ceramic
Al₂O₃ 99.9%
≥99.9%
High insulation and high temperature resistance
Silicon nitride ceramic
Si₃N₄ 99.5%
≥99.5%
High strength and wear-resistant
Zirconia ceramic
ZrO₂ 99.8%
≥99.8%
High toughness and resistance to thermal shock
Quartz glass
fused silica
99.999%
High light transmittance, low expansion
Surface treatment process
Processing category
Handling method
Core Feature
Coating process
Ultraviolet curing coating
Smooth surface and corrosion-resistant
Electroplating process
Nickel plating / Gold plating
Electrical conductivity, antioxidant property
Polishing process
Mechanical polishing
Mirror-like effect, flawless
Chemical treatment
Pickling and Passivation
Remove impurities and enhance stability
Technical accuracy indicators
Tolerance control: ±0.05mm
Surface roughness: Ra 0.4 μm
Inner hole taper accuracy: ±0.02mm
Coaxiality: ≤ 0.03mm
Verticality: ≤ 0.02mm
Accepted drawing formats: STP, STEP, LGS, XT, AutoCAD (DXF, DWG), PDF or physical samples
Delivery cycle: 4-7 weeks for samples, 8-12 weeks for batch products
Quality standards: ISO9001:2015, SGS RoHS, REACH, SEMI standards
Application field presentation
The ion source system used in ion implantation machines for the semiconductor manufacturing industry ensures the precise focusing and stable transmission of the ion beam, thereby improving the doping accuracy of the devices.
The flat panel display industry uses the ion beam processing system as a core component in the manufacturing equipment for plasma display panels (PDP).
Optical components are manufactured for ion beam deposition (IBD) and ion beam etching (IBE) equipment, and are used to produce high-precision optical films.
The production of MEMS devices employs ion beam technology in micro-electromechanical system manufacturing, ensuring the precise fabrication of microstructures.
Solar cells are manufactured with ion doping equipment to enhance the conversion efficiency of solar cells.
Power semiconductor devices are applied in the ion implantation processes of devices such as IGBT and power MOSFETs, thereby enhancing the performance of the devices. Frequently Asked Questions Answered
Q1: What materials are typically used for ion beam cones? A1: We mainly use advanced ceramic materials such as high-purity alumina (Al₂O₃), silicon nitride (Si₃N₄), and zirconia (ZrO₂). These materials possess extremely high purity, excellent high-temperature resistance, and stable electrical properties.
Q2: Can UET provide customized specifications and surface treatments? A2: Yes. UET can customize the size, taper, material type and surface treatment plan of the cones according to your process requirements. We have extensive manufacturing experience and can meet the special application needs of our customers.
Q3: How are the precision and quality of the product guaranteed? A3: We adopt the ISO9001:2015 quality management system and are equipped with high-precision testing equipment, such as three-coordinate measuring instruments, surface roughness meters, X-ray fluorescence spectrometers, etc., to ensure that each batch of products meets strict industry standards.
Q4: How long is the delivery cycle? A4: The delivery cycle for samples is 4 to 7 weeks, and for bulk products it is 8 to 12 weeks. The specific cycle is determined based on the complexity of the product and the order quantity.
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SIMO (TIANJIN) TECHNOLOGY CO., LTD.
Telephone: 136-4212-5292
Q Q:2767728703
Postal Code: 300350
Email: smkj889@163.com
思摩（天津)科技有限公司
电话:13642125292
传真:022-8861-6121
Q Q:2767728703
邮编:300350
邮箱:smkj889@163.com
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